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54.6 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTD4808N-1G by Onsemi

NTD4808N-1G

Onsemi

NTD4808N-1G by Onsemi is a single N-channel power FET with built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 126A, and max operating temperature of 175 °C. With a package style of in-line and terminal finish of matte tin, it offers efficient performance in various electronic systems.

144.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

63 A

9.8 A

.0124 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

54.6 W

126 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

NTD4808N-35G by Onsemi

NTD4808N-35G

Onsemi

NTD4808N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 126A IDM, and 0.0124 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with built-in diode. Operating in enhancement mode, this transistor has a max power dissipation of 54.6W and can handle up to 175°C operating temperature.

144.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

63 A

9.8 A

.0124 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

54.6 W

126 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD4808NT4G by Onsemi

NTD4808NT4G

Onsemi

NTD4808NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 126A and EAS of 144.5mJ, making it suitable for high-power operations. With a 0.0124 ohm Drain-Source On Resistance, this MOSFET can handle up to 9.8A ID efficiently in a SMALL OUTLINE package.

144.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

63 A

9.8 A

.0124 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

54.6 W

126 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON