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535 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTC020N120SC1 by Onsemi

NTC020N120SC1

Onsemi

NTC020N120SC1 by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a 1200V DS breakdown voltage, 412A max pulsed drain current, and 264mJ avalanche energy rating. Operating in enhancement mode, it has a max power dissipation of 535W and can withstand temperatures from -55 to 175 °C.

264 mJ

SINGLE WITH BUILT-IN DIODE

1200 V

103 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

22 pF

R-XUUC-N4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

535 W

412 A

YES

NO LEAD

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE