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503 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTHL020N090SC1 by Onsemi

NTHL020N090SC1

Onsemi

NTHL020N090SC1 by Onsemi is a Power FET with 900V DS Breakdown Voltage, ideal for switching applications. It features a max IDM of 472A and EAS of 264mJ, operating in Enhancement Mode. With a max ID of 118A and RDS(on) of 0.028 ohm, it offers high power dissipation up to 503W in a rectangular package style.

264 mJ

SINGLE WITH BUILT-IN DIODE

900 V

118 A

118 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

24 pF

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

503 W

472 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

NVHL020N090SC1 by Onsemi

NVHL020N090SC1

Onsemi

NVHL020N090SC1 by Onsemi is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 472A and EAS of 264mJ, making it suitable for high-power operations. With an Abs ID of 118A and 0.028 ohm RDS(on), this MOSFET offers efficient performance in various industrial settings.

264 mJ

SINGLE WITH BUILT-IN DIODE

900 V

118 A

118 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

24 pF

TO-247

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

503 W

472 A

AEC-Q101

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON CARBIDE