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5.4 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SI7483ADP-T1-E3 by Vishay Intertechnology

SI7483ADP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7483ADP-T1-E3 is a P-CHANNEL FET for switching applications. Features include 30V DS breakdown voltage, 60A IDM, and 0.0057 ohm RDS(on). With a max power dissipation of 5.4W and operating temperature up to 150°C, it is ideal for high-power circuit designs.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

14 A

14 A

.0057 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

5.4 W

60 A

Not Qualified

Other Transistors

YES

MATTE TIN

C BEND

DUAL

SWITCHING

SILICON