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41.7 W Power Field Effect Transistors (FET) 10

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STFI260N6F6 by STMicroelectronics

STFI260N6F6

STMicroelectronics

STFI260N6F6 by STMicroelectronics is a N-CHANNEL FET with 80A ID and 41.7W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors.

SINGLE

80 A

80 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

41.7 W

FET General Purpose Powers

NO

NOT SPECIFIED

NTMFS4841NHT1G by Onsemi

NTMFS4841NHT1G

Onsemi

NTMFS4841NHT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 177A IDM, and 0.0116 ohm RDS(on). Ideal for SWITCHING applications due to its 41.7W Power Dissipation, METAL-OXIDE SEMICONDUCTOR technology, and ENHANCEMENT MODE operation.

98 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

59 A

13.5 A

.0116 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

41.7 W

177 A

Not Qualified

FET General Purpose Powers

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFS4841NHT3G by Onsemi

NTMFS4841NHT3G

Onsemi

NTMFS4841NHT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 177A, EAS of 98mJ, and ID of 59A. With 0.0116 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 150 °C.

98 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

59 A

13.5 A

.0116 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

41.7 W

177 A

Not Qualified

FET General Purpose Powers

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTD40N03RT4 by Onsemi

NTD40N03RT4

Onsemi

NTD40N03RT4 by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max drain current of 32A, min DS breakdown voltage of 25V, and max pulsed drain current of 100A. This MOSFET operates in enhancement mode with a package style of small outline, making it suitable for high-power applications requiring efficient switching capabilities.

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

32 A

32 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

41.7 W

100 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD40N03R-1G by Onsemi

NTD40N03R-1G

Onsemi

NTD40N03R-1G by Onsemi is a power FET with a min DS breakdown voltage of 25V and max drain current of 32A. It is commonly used for switching applications due to its single configuration with built-in diode.

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

32 A

32 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

41.7 W

100 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD40N03RG by Onsemi

NTD40N03RG

Onsemi

NTD40N03RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 32A, Max Pulsed Drain Current of 100A, and Min DS Breakdown Voltage of 25V. With a package style of SMALL OUTLINE and operating temperature up to 150 °C, it is ideal for high-power switching circuits.

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

32 A

32 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

41.7 W

100 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD40N03RT4G by Onsemi

NTD40N03RT4G

Onsemi

NTD40N03RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 32A, Max Pulsed Drain Current of 100A, and Min DS Breakdown Voltage of 25V. With a Package Style of SMALL OUTLINE and Surface Mount capability, it operates in ENHANCEMENT MODE at up to 175 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

32 A

32 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

41.7 W

100 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

SUD45P03-09-GE3 by Vishay Intertechnology

SUD45P03-09-GE3

Vishay Intertechnology

Vishay Intertechnology's SUD45P03-09-GE3 is a P-channel Power FET with 30V DS breakdown voltage and 45A max drain current. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 41.7W and operating temperature up to 150°C, this MOSFET offers high performance in a small outline package.

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

45 A

45 A

.0087 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

41.7 W

100 A

Not Qualified

Other Transistors

YES

GULL WING

SINGLE

SWITCHING

SILICON

DMT68M8LFV-13 by Diodes Incorporated

DMT68M8LFV-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41.7 W; Terminal Form: FLAT; Terminal Position: DUAL;

39 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

54.1 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

44 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

41.7 W

210 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT68M8LFV-7 by Diodes Incorporated

DMT68M8LFV-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41.7 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 8;

39 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

54.1 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

44 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

41.7 W

210 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON