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41 W Power Field Effect Transistors (FET) 9

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN013-30LL,115 by NXP Semiconductors

PSMN013-30LL,115

NXP Semiconductors

PSMN013-30LL,115 by NXP Semiconductors is a single N-channel MOSFET ideal for power management applications. It supports a max drain current of 21 A and power dissipation of 41 W, operating efficiently up to 150 °C. This enhancement mode FET is perfect for compact surface mount designs.

SINGLE

21 A

21 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

41 W

FET General Purpose Power

YES

AOTF240L by Alpha & Omega Semiconductor

AOTF240L

Alpha & Omega Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41 W; Maximum Drain Current (ID): 85 A; No. of Elements: 1;

SINGLE

85 A

85 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

41 W

FET General Purpose Power

NO

DMP2006UFG-13 by Diodes Incorporated

DMP2006UFG-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Transistor Application: SWITCHING; No. of Elements: 1;

28 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

17.5 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

900 pF

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

41 W

80 A

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

370 ns

55 ns

DMP2006UFG-7 by Diodes Incorporated

DMP2006UFG-7

Diodes Incorporated

DMP2006UFG-7 by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 28mJ EAS, and 0.0055 ohm RDS(ON). Operating from -55 to 150 °C, it has a compact SQUARE package with NO LEAD terminals for surface mount assembly.

28 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

17.5 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

900 pF

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

41 W

80 A

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

370 ns

55 ns

DMN60H3D5SK3-13 by Diodes Incorporated

DMN60H3D5SK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; JESD-30 Code: R-PSSO-G2; Maximum Pulsed Drain Current (IDM): 4.4 A;

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

2.8 A

2.8 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

41 W

4.4 A

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

DMN60H4D5SK3-13 by Diodes Incorporated

DMN60H4D5SK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; JESD-30 Code: R-PSSO-G2; Maximum Pulsed Drain Current (IDM): 2.6 A;

33 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

2.5 A

2.5 A

41 ohm

METAL-OXIDE SEMICONDUCTOR

4.2 pF

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

41 W

2.6 A

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

DMN80H2D0SCTI by Diodes Incorporated

DMN80H2D0SCTI

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41 W; No. of Terminals: 3; No. of Elements: 1;

60 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

800 V

7 A

7 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

41 W

28 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

DMN10H220LFVW-13 by Diodes Incorporated

DMN10H220LFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Maximum Drain-Source On Resistance: .222 ohm; No. of Terminals: 8;

1.1 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

11 A

.222 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

41 W

44 A

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN10H220LFVW-7 by Diodes Incorporated

DMN10H220LFVW-7

Diodes Incorporated

DMN10H220LFVW-7 by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 44A IDM, 1.1mJ EAS, and 0.222 ohm Drain-Source On Resistance. Operates in -55 to 150 °C with Matte Tin finish and DUAL Terminal Position.

1.1 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

11 A

.222 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

41 W

44 A

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON