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375 W Power Field Effect Transistors (FET) 10

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FQH140N10 by Fairchild Semiconductor

FQH140N10

Fairchild Semiconductor

FQH140N10 by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 560A IDM, and 0.01 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 375W and can handle up to 175°C temperature.

1500 mJ

SINGLE WITH BUILT-IN DIODE

100 V

140 A

140 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

560 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SUM110N06-3M4L-E3 by Vishay Intertechnology

SUM110N06-3M4L-E3

Vishay Intertechnology

Vishay Intertechnology's SUM110N06-3M4L-E3 is a N-channel FET with 60V DS breakdown voltage and 440A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.0034 ohm max RDS(on), and 175°C max operating temp.

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

110 A

110 A

.0034 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

375 W

440 A

Not Qualified

FET General Purpose Powers

YES

Matte Tin (Sn)

GULL WING

SINGLE

30

SWITCHING

SILICON

SUM110N06-3M9H-E3 by Vishay Intertechnology

SUM110N06-3M9H-E3

Vishay Intertechnology

Vishay Intertechnology's SUM110N06-3M9H-E3 is a N-channel Power FET with 60V DS breakdown voltage and 440A pulsed drain current. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it offers 0.0039 ohm max drain-source resistance and 375W power dissipation.

245 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

110 A

110 A

.0039 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

375 W

440 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

AUIRFS4127 by Infineon Technologies

AUIRFS4127

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Reference Standard: AEC-Q101; Minimum Operating Temperature: -55 Cel;

FAST SWITCHING, ULTRA-LOW RESISTANCE

250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

72 A

72 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

375 W

300 A

AEC-Q101

YES

GULL WING

SINGLE

SWITCHING

SILICON

SUP90142E-GE3 by Vishay Intertechnology

SUP90142E-GE3

Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;

180 mJ

SINGLE WITH BUILT-IN DIODE

200 V

90 A

.0169 ohm

METAL-OXIDE SEMICONDUCTOR

24 pF

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

375 W

240 A

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

204 ns

278 ns

IAUT300N08S5N012ATMA1 by Infineon Technologies

IAUT300N08S5N012ATMA1

Infineon Technologies

Infineon's IAUT300N08S5N012ATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage and 1200A IDM. Ideal for power applications, it features a built-in diode, 817mJ EAS rating, and -55 to 175°C operating range.

817 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

300 A

.0012 ohm

METAL-OXIDE SEMICONDUCTOR

130 pF

R-PSSO-F8

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

375 W

1200 A

AEC-Q101

YES

FLAT

SINGLE

SILICON

IRL60SC216ARMA1 by Infineon Technologies

IRL60SC216ARMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Terminal Position: SINGLE; Moisture Sensitivity Level (MSL): 1;

531 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

324 A

.0015 ohm

METAL-OXIDE SEMICONDUCTOR

810 pF

TO-263CB

R-PSSO-G6

e3

1

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

375 W

1296 A

YES

MATTE TIN OVER NICKEL

GULL WING

SINGLE

30

SILICON

FDP032N08-F102 by Onsemi

FDP032N08-F102

Onsemi

FDP032N08-F102 by Onsemi is a N-CHANNEL Power FET with 75V DS Breakdown Voltage and 940A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 375W, this transistor has a 0.0032 ohm Drain-Source On Resistance.

1995 mJ

SINGLE WITH BUILT-IN DIODE

75 V

235 A

235 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

800 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

940 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

932 ns

862 ns

IAUS300N04S4N007ATMA1 by Infineon Technologies

IAUS300N04S4N007ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Feedback Capacitance (Crss): 368 pF; Maximum Drain Current (Abs) (ID): 300 A;

ULTRA LOW ON RESISTANCE

1100 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

300 A

300 A

.00074 ohm

METAL-OXIDE SEMICONDUCTOR

368 pF

R-PSSO-G8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

375 W

1200 A

AEC-Q101

YES

TIN

GULL WING

SINGLE

SILICON

IMW120R020M1HXKSA1 by Infineon Technologies

IMW120R020M1HXKSA1

Infineon Technologies

IMW120R020M1HXKSA1 by Infineon is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 213A and EAS of 721mJ. Operating in ENHANCEMENT MODE, this FET has a max ID of 98A and 0.03ohm RDS(on), suitable for high-power systems.

721 mJ

SINGLE WITH BUILT-IN DIODE

1200 V

98 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

23 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

213 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE