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34.7 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPA65R110CFDXKSA1 by Infineon Technologies

IPA65R110CFDXKSA1

Infineon Technologies

Infineon's IPA65R110CFDXKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 99.6A IDM, 845mJ EAS, and 0.11 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 34.7W in a RECTANGULAR package with THROUGH-HOLE terminals.

845 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

31.2 A

31.2 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

34.7 W

99.6 A

Not Qualified

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPA65R150CFDXKSA1 by Infineon Technologies

IPA65R150CFDXKSA1

Infineon Technologies

Infineon's IPA65R150CFDXKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 72A IDM, 614mJ EAS, and 0.15 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 34.7W in a FLANGE MOUNT package.

614 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

22.4 A

22.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

34.7 W

72 A

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPA65R110CFDXKSA2 by Infineon Technologies

IPA65R110CFDXKSA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34.7 W; JESD-30 Code: R-PSFM-T3; JEDEC-95 Code: TO-220AB;

845 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

31.2 A

31.2 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

34.7 W

99.6 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPA65R150CFDXKSA2 by Infineon Technologies

IPA65R150CFDXKSA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34.7 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 72 A;

614 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

22.4 A

22.4 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

34.7 W

72 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON