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34 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN9R0-25YLC,115 by NXP Semiconductors

PSMN9R0-25YLC,115

NXP Semiconductors

PSMN9R0-25YLC,115 from NXP Semiconductors is an N-channel MOSFET ideal for power applications. It supports a max drain current of 46 A and power dissipation of 34 W, operating up to 175 °C. This surface-mount FET is perfect for efficient energy management in various devices.

SINGLE

46 A

46 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

260

N-CHANNEL

34 W

FET General Purpose Power

YES

TIN

30

IPA65R190CFDXKSA1 by Infineon Technologies

IPA65R190CFDXKSA1

Infineon Technologies

Infineon's IPA65R190CFDXKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 57.2A IDM, 484mJ EAS, and 0.19 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 34W in a RECTANGULAR package with THROUGH-HOLE terminals.

484 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

17.5 A

17.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

34 W

57.2 A

Not Qualified

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPAW60R190CEXKSA1 by Infineon Technologies

IPAW60R190CEXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34 W; Terminal Form: THROUGH-HOLE; Maximum Operating Temperature: 150 Cel;

418 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

26.7 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

34 W

59 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPA65R190CFDXKSA2 by Infineon Technologies

IPA65R190CFDXKSA2

Infineon Technologies

Infineon's IPA65R190CFDXKSA2 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 57.2A pulsed drain current, 484mJ avalanche energy rating, and 0.19 ohm max on-resistance. Operating in enhancement mode, it has a max power dissipation of 34W and can withstand temperatures up to 150°C.

484 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

17.5 A

17.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

34 W

57.2 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON