Loading...

338 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVH4L045N065SC1 by Onsemi

NVH4L045N065SC1

Onsemi

NVH4L045N065SC1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 65.5A Drain Current. Ideal for high-power applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 338W, this MOSFET is suitable for various industrial uses.

SINGLE WITH BUILT-IN DIODE

650 V

65.5 A

65.5 A

METAL-OXIDE SEMICONDUCTOR

13.76 pF

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

338 W

312 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SILICON CARBIDE

PSMN2R0-60PSRQ by Nexperia

PSMN2R0-60PSRQ

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 338 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

HIGH RELIABILITY

913 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

120 A

120 A

.0022 ohm

METAL-OXIDE SEMICONDUCTOR

835 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

338 W

1135 A

IEC-60134

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

247 ns

147 ns