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333 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AOT480L by Alpha & Omega Semiconductor

AOT480L

Alpha & Omega Semiconductor

AOT480L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 180A ID and 333W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 175°C, making it suitable for demanding industrial and automotive systems.

SINGLE

180 A

180 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

333 W

FET General Purpose Power

NO

BUK761R8-30C,118 by NXP Semiconductors

BUK761R8-30C,118

NXP Semiconductors

NXP Semiconductors' BUK761R8-30C,118 is a N-CHANNEL Power FET with 100A max drain current and 333W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as industrial motor control systems or power supplies.

SINGLE

100 A

100 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

245

N-CHANNEL

333 W

FET General Purpose Power

YES

TIN

30

BUK7E4R3-75C,127 by NXP Semiconductors

BUK7E4R3-75C,127

NXP Semiconductors

The BUK7E4R3-75 °C,127 by NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 100 A and power dissipation of 333 W, operating up to 175 °C. Ideal for automotive and industrial power management solutions.

SINGLE

100 A

100 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

333 W

FET General Purpose Power

NO

TIN

AOB1608L by Alpha & Omega Semiconductor

AOB1608L

Alpha & Omega Semiconductor

AOB1608L by Alpha & Omega Semiconductor is an N-CHANNEL Power FET with a 60V DS Breakdown Voltage. It features a built-in diode, 256A IDM, and 0.0073 ohm RDS(on), making it ideal for SWITCHING applications. With a max power dissipation of 333W and operating temperature range from -55 to 175 °C, this MOSFET is suitable for high-power electronic systems.

638 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

140 A

11 A

.0073 ohm

METAL-OXIDE SEMICONDUCTOR

80 pF

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

333 W

256 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

STH272N6F7-6AG by STMicroelectronics

STH272N6F7-6AG

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 333 W; Maximum Drain-Source On Resistance: .0015 ohm; JESD-30 Code: R-PSSO-G6;

1900 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

180 A

.0015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G6

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

333 W

720 A

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

FDP2D9N12C by Onsemi

FDP2D9N12C

Onsemi

FDP2D9N12C by Onsemi is a N-CHANNEL Power FET with 120V DS Breakdown Voltage and 18A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.005 ohm On Resistance, and can handle up to 333W power dissipation.

DRAIN

SINGLE WITH BUILT-IN DIODE

120 V

18 A

18 A

.005 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

333 W

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON