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310 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FDB3632_F085 by Fairchild Semiconductor

FDB3632_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDB3632_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.009 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 310W and can withstand temperatures up to 175°C.

338 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

12 A

12 A

.009 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

310 W

AEC-Q101

FET General Purpose Powers

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

FDB2532_F085 by Fairchild Semiconductor

FDB2532_F085

Fairchild Semiconductor

FDB2532_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, 79A Drain Current, and 0.016 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with a built-in DIODE. This transistor operates at up to 175°C and has a power dissipation of 310W in a small outline package.

400 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

79 A

8 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

310 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

STB200NF04-1 by STMicroelectronics

STB200NF04-1

STMicroelectronics

STB200NF04-1 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 40 V, and power dissipation up to 310 W. Ideal for high-efficiency circuits in demanding environments.

1300 mJ

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0037 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

310 W

480 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB200NF04T4 by STMicroelectronics

STB200NF04T4

STMicroelectronics

STB200NF04T4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and robust thermal performance.

1300 mJ

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0037 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

310 W

480 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STP200NF04 by STMicroelectronics

STP200NF04

STMicroelectronics

STP200NF04 from STMicroelectronics is a powerful N-channel FET ideal for switching applications. It features a max drain current of 120 A, breakdown voltage of 40 V, and power dissipation up to 310 W. Its robust design ensures reliability in demanding environments.

1300 mJ

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0037 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

310 W

480 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB190NF04T4 by STMicroelectronics

STB190NF04T4

STMicroelectronics

STB190NF04T4 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.

860 mJ

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0043 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

310 W

480 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

FDB045AN08A0-F085 by Onsemi

FDB045AN08A0-F085

Onsemi

FDB045AN08A0-F085 by Onsemi is a N-CHANNEL Power FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 19A Drain Current, 0.0045 ohm On Resistance, and 310W Power Dissipation in a RECTANGULAR package. Operating at up to 175°C, it uses METAL-OXIDE SEMICONDUCTOR technology for high performance.

600 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

75 V

19 A

19 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

310 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

FDP038AN06A0-F102 by Onsemi

FDP038AN06A0-F102

Onsemi

FDP038AN06A0-F102 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 17A Drain Current. Ideal for SWITCHING applications, it features a 175°C Max Operating Temp, 0.0038 ohm RDS(on), and 625 mJ Avalanche Energy Rating.

625 mJ

SINGLE WITH BUILT-IN DIODE

60 V

17 A

17 A

.0038 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

310 W

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

115 ns

175 ns