Loading...

3.84 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9MPP-65PLL,518 by NXP Semiconductors

BUK9MPP-65PLL,518

NXP Semiconductors

BUK9MPP-65PLL,518 by NXP Semiconductors is an N-channel power FET designed for enhancement mode applications. It supports a max drain current of 8.6 A and power dissipation of 3.84 W, operating up to 150 °C. Ideal for efficient switching in various electronic devices.

8.6 A

8.6 A

METAL-OXIDE SEMICONDUCTOR

3

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

3.84 W

FET General Purpose Power

YES

30

NVMFS4C01NT3G by Onsemi

NVMFS4C01NT3G

Onsemi

NVMFS4C01NT3G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 900A IDM, and 0.00095 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.

862 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

319 A

319 A

.00095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.84 W

900 A

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS4C01NWFT3G by Onsemi

NVMFS4C01NWFT3G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.84 W; Peak Reflow Temperature (C): 260; Minimum Operating Temperature: -55 Cel;

862 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

319 A

319 A

.00095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.84 W

900 A

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON