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29.4 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTD4909N-35G by Onsemi

NTD4909N-35G

Onsemi

NTD4909N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 41A Drain Current, and 0.012 ohm On Resistance. Ideal for SWITCHING applications due to its 167A Pulsed Drain Current and 29.4W Power Dissipation capabilities in ENHANCEMENT MODE operation.

28 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

41 A

8.8 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

29.4 W

167 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

DMTH69M8LFVW-13 by Diodes Incorporated

DMTH69M8LFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29.4 W; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 180 A;

45 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

45.4 A

15.9 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

41 pF

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

29.4 W

180 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH69M8LFVW-7 by Diodes Incorporated

DMTH69M8LFVW-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29.4 W; Case Connection: DRAIN; Minimum Operating Temperature: -55 Cel;

45 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

45.4 A

15.9 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

41 pF

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

29.4 W

180 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH69M8LFVWQ-13 by Diodes Incorporated

DMTH69M8LFVWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29.4 W; Transistor Element Material: SILICON; Terminal Position: DUAL;

HIGH RELIABILITY

45 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15.9 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

41 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

29.4 W

180 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON