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278 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPP60R099P6XKSA1 by Infineon Technologies

IPP60R099P6XKSA1

Infineon Technologies

Infineon's IPP60R099P6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 109A IDM, 796mJ EAS, and 0.099ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 278W and can handle up to 37.9A ID.

796 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

37.9 A

.099 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

278 W

109 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPDD60R050G7XTMA1 by Infineon Technologies

IPDD60R050G7XTMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 278 W; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;

159 mJ

SINGLE WITH BUILT-IN DIODE

600 V

47 A

47 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PDSO-G10

e3

1

1

10

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

278 W

135 A

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

AOT14N50FD by Alpha & Omega Semiconductor

AOT14N50FD

Alpha & Omega Semiconductor

AOT14N50FD by Alpha & Omega Semiconductor is a N-CHANNEL FET with 14 A max drain current and 278 W power dissipation. Ideal for high-power applications, it operates at up to 150°C.

SINGLE

14 A

14 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

278 W

FET General Purpose Power

NO

NOT SPECIFIED

MSC035SMA170S by Microchip Technology

MSC035SMA170S

Microchip Technology

MSC035SMA170S by Microchip Technology is a N-CHANNEL FET with 1700V DS breakdown voltage, ideal for switching applications. It features a max IDM of 200A and 0.045 ohm RDS(on), operating in enhancement mode. With a package style of small outline, it utilizes silicon carbide technology for high power dissipation up to 278W at 175°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

1700 V

59 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-268AA

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

278 W

200 A

YES

GULL WING

SINGLE

SWITCHING

SILICON CARBIDE

MSC017SMA120J by Microchip Technology

MSC017SMA120J

Microchip Technology

MSC017SMA120J by Microchip is a N-CHANNEL FET with 1200V DS breakdown voltage, 280A IDM, and 3500mJ EAS. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it offers 0.022 ohm RDS(on) and can handle up to 175°C operating temperature.

3500 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

1200 V

88 A

88 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PUFM-X4

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

278 W

280 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE