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277.8 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPI65R110CFDXKSA1 by Infineon Technologies

IPI65R110CFDXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 277.8 W; Maximum Drain Current (Abs) (ID): 31.2 A; Package Body Material: PLASTIC/EPOXY;

845 mJ

SINGLE WITH BUILT-IN DIODE

650 V

31.2 A

31.2 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

277.8 W

99.6 A

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPP65R110CFDXKSA1 by Infineon Technologies

IPP65R110CFDXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 277.8 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 31.2 A;

845 mJ

SINGLE WITH BUILT-IN DIODE

650 V

31.2 A

31.2 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

277.8 W

99.6 A

Not Qualified

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPW65R110CFDFKSA1 by Infineon Technologies

IPW65R110CFDFKSA1

Infineon Technologies

IPW65R110CFDFKSA1 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 99.6A Pulsed Drain Current, 845mJ Avalanche Energy Rating, and 0.11 ohm On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 277.8W power dissipation efficiently at temperatures ranging from -55°C to 150°C.

845 mJ

SINGLE WITH BUILT-IN DIODE

650 V

31.2 A

31.2 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

277.8 W

99.6 A

Not Qualified

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPW65R110CFDFKSA2 by Infineon Technologies

IPW65R110CFDFKSA2

Infineon Technologies

IPW65R110CFDFKSA2 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 99.6A Pulsed Drain Current, 845mJ Avalanche Energy Rating, and 0.11 ohm On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 277.8W power dissipation at temperatures ranging from -55 to 150 °C.

845 mJ

SINGLE WITH BUILT-IN DIODE

650 V

31.2 A

31.2 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

277.8 W

99.6 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP65R110CFDXKSA2 by Infineon Technologies

IPP65R110CFDXKSA2

Infineon Technologies

Infineon's IPP65R110CFDXKSA2 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. Featuring 99.6A IDM and 0.11 ohm RDS(on), it operates in ENHANCEMENT MODE with 277.8W power dissipation, suitable for high-power systems. With a temperature range of -55 to 150 °C, it offers reliable performance in various environments.

845 mJ

SINGLE WITH BUILT-IN DIODE

650 V

31.2 A

31.2 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

277.8 W

99.6 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON