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270 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SCT30N120H by STMicroelectronics

SCT30N120H

STMicroelectronics

SCT30N120H by STMicroelectronics is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. It has a max IDM of 90A and ID of 40A, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features a Drain-Source On Resistance of 0.1 ohm and can handle up to 270W power dissipation.

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

40 A

40 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

245

N-CHANNEL

270 W

90 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

SCTH50N120-7 by STMicroelectronics

SCTH50N120-7

STMicroelectronics

SCTH50N120-7 by STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 1200V breakdown voltage and 65A max drain current. It operates in enhancement mode with a low on-resistance of 0.069Ω. Ideal for high-efficiency power management in compact designs.

BULK: 1000

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

65 A

.069 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

R-PSSO-G7

1

7

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

270 W

130 A

YES

GULL WING

SINGLE

SWITCHING

SILICON CARBIDE