Loading...

266 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTHL067N65S3H by Onsemi

NTHL067N65S3H

Onsemi

NTHL067N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 112A IDM, and 0.067 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration. Operating in ENHANCEMENT MODE, it can handle up to 266W power dissipation.

422 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

40 A

.067 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

266 W

112 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTH4LN067N65S3H by Onsemi

NTH4LN067N65S3H

Onsemi

NTH4LN067N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 112A IDM, and 0.067 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 266W.

422 mJ

SINGLE WITH BUILT-IN DIODE

650 V

40 A

.067 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

266 W

112 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTH4L067N65S3H by Onsemi

NTH4L067N65S3H

Onsemi

NTH4L067N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 112A IDM, and 0.067 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 266W. The transistor features an avalanche energy rating of 422mJ and can withstand temperatures from -55 to 150 °C.

422 mJ

SINGLE WITH BUILT-IN DIODE

650 V

40 A

.067 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

266 W

112 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON