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25.9 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTD3817N-35G by Onsemi

NTD3817N-35G

Onsemi

NTD3817N-35G by Onsemi is a Power FET with 16V DS Breakdown Voltage, 78A IDM, and 0.029 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with a built-in diode. Operating in enhancement mode, this transistor has a max power dissipation of 25.9W and can handle up to 175 °C temperature.

15 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

16 V

34.5 A

7.6 A

.029 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

25.9 W

78 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD3817NT4G by Onsemi

NTD3817NT4G

Onsemi

NTD3817NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 16V DS Breakdown Voltage, 78A Pulsed Drain Current, and 0.029 ohm Drain-Source On Resistance. This MOSFET operates in ENHANCEMENT MODE with a max temperature of 175 °C, making it ideal for high-power switching circuits.

15 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

16 V

34.5 A

7.6 A

.029 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e1

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

25.9 W

78 A

Not Qualified

FET General Purpose Power

YES

TIN SILVER COPPER

GULL WING

SINGLE

SWITCHING

SILICON