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25.5 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFS4C09NT1G-001 by Onsemi

NTMFS4C09NT1G-001

Onsemi

NTMFS4C09NT1G-001 by Onsemi is a N-channel FET with 52A max drain current and 25.5W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 150 °C. Suitable for surface mount configurations, this MOSFET is commonly used in power management systems.

SINGLE

52 A

52 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

25.5 W

FET General Purpose Power

YES

NTMFS4C028NT3G by Onsemi

NTMFS4C028NT3G

Onsemi

NTMFS4C028NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 146A IDM, and 0.00473 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C.

42 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

52 A

9 A

.00473 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

25.5 W

146 A

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON