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242 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FDB5800_F085 by Fairchild Semiconductor

FDB5800_F085

Fairchild Semiconductor

FDB5800_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 80A ID and 242W power dissipation. It operates in enhancement mode, suitable for high-power applications like motor control and power supplies. This single configuration FET has a max operating temperature of 175°C, making it ideal for demanding environments.

SINGLE

80 A

80 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

242 W

FET General Purpose Power

YES

NTBGS002N06C by Onsemi

NTBGS002N06C

Onsemi

The Onsemi NTBGS002N06C is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 252A Drain Current. Ideal for applications requiring high power dissipation up to 242W, such as in power management systems or motor control circuits. Its small outline package and low on-resistance make it suitable for compact designs in various electronic devices.

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

252 A

252 A

.002 ohm

METAL-OXIDE SEMICONDUCTOR

26 pF

TO-263CB

R-PSSO-G6

e3

1

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

242 W

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SILICON