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23.4 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFD5489NLT1G by Onsemi

NVMFD5489NLT1G

Onsemi

NVMFD5489NLT1G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W max power dissipation. Utilizes Metal-Oxide Semiconductor tech, operates up to 175 °C, ideal for high-power applications in surface mount designs.

12 A

12 A

METAL-OXIDE SEMICONDUCTOR

e3

1

175 Cel

260

N-CHANNEL

23.4 W

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

30

NVMFD5489NLT3G by Onsemi

NVMFD5489NLT3G

Onsemi

NVMFD5489NLT3G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features surface mount technology for easy installation in various electronic devices.

12 A

12 A

METAL-OXIDE SEMICONDUCTOR

e3

1

175 Cel

260

N-CHANNEL

23.4 W

FET General Purpose Power

YES

TIN

30

NVMFD5489NLWFT3G by Onsemi

NVMFD5489NLWFT3G

Onsemi

NVMFD5489NLWFT3G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C, suitable for surface mount applications in various electronic devices.

12 A

12 A

METAL-OXIDE SEMICONDUCTOR

e3

1

175 Cel

260

N-CHANNEL

23.4 W

FET General Purpose Power

YES

TIN

30