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227 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPB65R045C7ATMA1 by Infineon Technologies

IPB65R045C7ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 227 W; Maximum Drain Current (Abs) (ID): 46 A; Maximum Operating Temperature: 150 Cel;

HIGH RELIABILITY

249 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

46 A

46 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

227 W

212 A

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

SUP85N10-10P-GE3 by Vishay Intertechnology

SUP85N10-10P-GE3

Vishay Intertechnology

Vishay Intertechnology's SUP85N10-10P-GE3 is a N-channel Power FET with 100V DS breakdown voltage and 240A max pulsed drain current. Ideal for high-power applications, it features a built-in diode, 0.01 ohm max RDS(on), and 180mJ avalanche energy rating.

180 mJ

SINGLE WITH BUILT-IN DIODE

100 V

85 A

85 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

227 W

240 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

FDD9507L-F085 by Onsemi

FDD9507L-F085

Onsemi

FDD9507L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.0072 ohm. Suitable for high-power systems requiring fast switching speeds.

259 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

100 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

227 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

710 ns

21 ns

IPW60R040CFD7XKSA1 by Infineon Technologies

IPW60R040CFD7XKSA1

Infineon Technologies

IPW60R040CFD7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a max pulsed drain current of 212A and an avalanche energy rating of 249mJ. With a package style of FLANGE MOUNT, it operates in temperatures ranging from -55 to 150 °C.

249 mJ

SINGLE WITH BUILT-IN DIODE

600 V

50 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

227 W

212 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPW80R290C3AFKSA1 by Infineon Technologies

IPW80R290C3AFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 227 W; JESD-30 Code: R-PSFM-T3; Maximum Operating Temperature: 150 Cel;

670 mJ

SINGLE WITH BUILT-IN DIODE

800 V

17 A

17 A

.29 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

227 W

51 A

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPB80R290C3AATMA1 by Infineon Technologies

IPB80R290C3AATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 227 W; Avalanche Energy Rating (EAS): 670 mJ; Maximum Drain Current (ID): 17 A;

670 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

800 V

17 A

17 A

.29 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

227 W

51 A

AEC-Q101

YES

GULL WING

SINGLE

SWITCHING

SILICON

IMZA120R040M1HXKSA1 by Infineon Technologies

IMZA120R040M1HXKSA1

Infineon Technologies

IMZA120R040M1HXKSA1 by Infineon is a N-CHANNEL FET with 1200V DS breakdown voltage, 117A IDM, and 0.0615 ohm max RDS(on). It's used for switching applications due to its single configuration with built-in diode. The transistor operates in enhancement mode and has a max power dissipation of 227W.

339 mJ

SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

1200 V

55 A

.0615 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

227 W

117 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE