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22.73 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTTFS4965NFTWG by Onsemi

NTTFS4965NFTWG

Onsemi

NTTFS4965NFTWG by Onsemi is a single N-channel Power FET with 64A max drain current and 22.73W max power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as automotive electronics and industrial control systems.

SINGLE

64 A

64 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

22.73 W

FET General Purpose Powers

YES

TIN

NTMFS4965NFT3G by Onsemi

NTMFS4965NFT3G

Onsemi

NTMFS4965NFT3G by Onsemi is a N-CHANNEL FET with 65A max drain current and 22.73W power dissipation. Ideal for power applications, it operates in enhancement mode with a max temp of 150 °C. Suitable for surface mount configurations, this MOSFET is widely used in high-power electronic devices.

SINGLE

65 A

65 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

22.73 W

FET General Purpose Powers

YES

TIN

30

NTTFS4985NFTWG by Onsemi

NTTFS4985NFTWG

Onsemi

NTTFS4985NFTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 192A IDM, and 0.0052 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.

52 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

64 A

16.3 A

.0052 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

22.73 W

192 A

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON