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22 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPD50R2K0CEBTMA1 by Infineon Technologies

IPD50R2K0CEBTMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 22 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

2.4 A

2.4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

22 W

FET General Purpose Power

YES

NOT SPECIFIED

IPU50R2K0CEBKMA1 by Infineon Technologies

IPU50R2K0CEBKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 22 W; Maximum Drain Current (Abs) (ID): 2.4 A; Maximum Drain Current (ID): 2.4 A;

SINGLE

2.4 A

2.4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

22 W

FET General Purpose Power

NO

NOT SPECIFIED

NVTFS5826NLWFTWG by Onsemi

NVTFS5826NLWFTWG

Onsemi

NVTFS5826NLWFTWG by Onsemi is a single N-channel Power FET with 20A max drain current and 22W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, ideal for high-power applications in surface mount configurations.

SINGLE

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

22 W

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

30