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217 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVB6411ANT4G by Onsemi

NVB6411ANT4G

Onsemi

NVB6411ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 285A IDM. Ideal for applications requiring high power dissipation, such as automotive electronics due to AEC-Q101 standard compliance.

470 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

77 A

77 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

217 W

285 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

NTB6411ANG by Onsemi

NTB6411ANG

Onsemi

NTB6411ANG by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 285A IDM, and 0.014 ohm RDS(on). It is used in applications requiring high power dissipation up to 217W, such as power supplies and motor control systems.

470 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

77 A

72 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

217 W

285 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

30

SILICON

NTB6411ANT4G by Onsemi

NTB6411ANT4G

Onsemi

NTB6411ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 285A IDM, and 0.014 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package.

470 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

77 A

72 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

217 W

285 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

30

SILICON

NTP6411ANG by Onsemi

NTP6411ANG

Onsemi

NTP6411ANG by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 285A IDM, and 0.014 ohm RDS. It's used in power applications due to its 217W Pdiss, 470mJ EAS rating, and -55 °C to +175°C operating temp range.

470 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

77 A

72 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

217 W

285 A

Not Qualified

FET General Purpose Powers

NO

TIN

THROUGH-HOLE

SINGLE

SILICON