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205 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IRFP450B by Fairchild Semiconductor

IRFP450B

Fairchild Semiconductor

Fairchild Semiconductor's IRFP450B is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 56A IDM, 990mJ EAS, and 0.39 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C.

990 mJ

SINGLE WITH BUILT-IN DIODE

500 V

14 A

14 A

.39 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

205 W

56 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP11NM80 by STMicroelectronics

STP11NM80

STMicroelectronics

STP11NM80 by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM, 400mJ EAS, and 0.4 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 205W at 150°C.

ULTRA-LOW RESISTANCE

400 mJ

SINGLE WITH BUILT-IN DIODE

800 V

11 A

11 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

205 W

44 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FCP22N60N-F102 by Onsemi

FCP22N60N-F102

Onsemi

FCP22N60N-F102 by Onsemi is a Power FET with 600V DS Breakdown Voltage, 66A IDM, and 0.165 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features single configuration with built-in diode, operating temperature range of -55 to 150 °C.

672 mJ

SINGLE WITH BUILT-IN DIODE

600 V

22 A

22 A

.165 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

205 W

66 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON