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20.8 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTD14N03R by Onsemi

NTD14N03R

Onsemi

NTD14N03R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 11.4A, Max Pulsed Drain Current of 28A, and Min DS Breakdown Voltage of 25V. This MOSFET operates in ENHANCEMENT MODE and has a Max Operating Temperature of 150 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

11.4 A

11.4 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

20.8 W

28 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD14N03RT4 by Onsemi

NTD14N03RT4

Onsemi

NTD14N03RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 11.4A Drain Current, and 0.13 ohm On Resistance. With a max power dissipation of 20.8W and operating temperature up to 150 °C, it is ideal for high-performance electronic devices requiring efficient power management in compact designs.

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

11.4 A

11.4 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

20.8 W

28 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD14N03RG by Onsemi

NTD14N03RG

Onsemi

NTD14N03RG by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max drain current of 11.4A, min DS breakdown voltage of 25V, and max pulsed drain current of 28A. This MOSFET operates in enhancement mode with a max power dissipation of 20.8W and can withstand temperatures up to 150 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

11.4 A

11.4 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

20.8 W

28 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTD14N03R-001 by Onsemi

NTD14N03R-001

Onsemi

NTD14N03R-001 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 11.4A Drain Current, and 0.13 ohm On Resistance. With a max power dissipation of 20.8W and operating temperature up to 150 °C, it is ideal for various electronic devices requiring high-performance transistors.

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

11.4 A

11.4 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

235

N-CHANNEL

20.8 W

28 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD14N03R-1G by Onsemi

NTD14N03R-1G

Onsemi

NTD14N03R-1G by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 25V, max drain current of 11.4A, and max power dissipation of 20.8W. This MOSFET operates in enhancement mode with a max operating temperature of 150 °C, making it suitable for various power control applications.

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

11.4 A

11.4 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

20.8 W

28 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SVD14N03RT4G by Onsemi

SVD14N03RT4G

Onsemi

SVD14N03RT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 28A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 20.8W and operates in the temperature range of -55 to 150 °C.

FAST SWITCHING

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

14 A

11.4 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

1

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

20.8 W

28 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON