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2.9 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STN1N20 by STMicroelectronics

STN1N20

STMicroelectronics

STN1N20 by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 200V DS Breakdown Voltage, 4A IDM, and 10mJ EAS. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 2.9W in a SMALL OUTLINE package suitable for surface mount assembly.

10 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

1 A

1 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.9 W

4 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STL9P2UH7 by STMicroelectronics

STL9P2UH7

STMicroelectronics

STL9P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage, 36A IDM, and 0.085 ohm RDS(on). It is used for SWITCHING applications in small outline packages with 5 terminals.

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

9 A

9 A

.085 ohm

METAL-OXIDE SEMICONDUCTOR

188 pF

S-PDSO-F5

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

2.9 W

36 A

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON