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2.2 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FW811-TL-E by Onsemi

FW811-TL-E

Onsemi

FW811-TL-E by Onsemi is an N-CHANNEL Power FET with 8A max drain current and 2.2W power dissipation. It operates in enhancement mode, suitable for applications requiring high power efficiency at up to 150 °C. This surface-mount transistor features metal-oxide semiconductor technology and tin/bismuth terminal finish.

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

e6

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

2.2 W

FET General Purpose Power

YES

Tin/Bismuth (Sn/Bi)

DMT8012LFG-13 by Diodes Incorporated

DMT8012LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Feedback Capacitance (Crss): 10 pF; JESD-609 Code: e3;

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

9.5 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

S-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.2 W

80 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN22M5UFG-13 by Diodes Incorporated

DMN22M5UFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-30 Code: S-PDSO-N5; Package Body Material: PLASTIC/EPOXY;

175 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

27 A

.0025 ohm

METAL-OXIDE SEMICONDUCTOR

538 pF

S-PDSO-N5

e3

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.2 W

500 A

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMP1008UCA9-7 by Diodes Incorporated

DMP1008UCA9-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: SQUARE;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

8 V

16 A

16 A

.0091 ohm

METAL-OXIDE SEMICONDUCTOR

164 pF

S-PBGA-B9

e4

1

1

9

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

2.2 W

80 A

YES

COPPER NICKEL GOLD

BALL

BOTTOM

SWITCHING

SILICON

DMT64M8LSS-13 by Diodes Incorporated

DMT64M8LSS-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Pulsed Drain Current (IDM): 130 A; Transistor Application: SWITCHING;

111 mJ

SINGLE WITH BUILT-IN DIODE

60 V

13.6 A

.005 ohm

METAL-OXIDE SEMICONDUCTOR

75 pF

R-PDSO-G8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.2 W

130 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON