Loading...

198 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFS6B03NT1G by Onsemi

NVMFS6B03NT1G

Onsemi

NVMFS6B03NT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 520A IDM, and 0.0048 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

180 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

145 A

20 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

198 W

520 A

AEC-Q101

YES

TIN

FLAT

DUAL

30

SILICON

NVMFS6B03NWFT1G by Onsemi

NVMFS6B03NWFT1G

Onsemi

NVMFS6B03NWFT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 520A IDM, and 0.0048 ohm RDS(ON). It is an N-CHANNEL MOSFET ideal for automotive applications due to its AEC-Q101 standard compliance and high power dissipation of 198W.

180 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

145 A

20 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

198 W

520 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B03NWFT3G by Onsemi

NVMFS6B03NWFT3G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 198 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-F5;

180 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

145 A

20 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

198 W

520 A

AEC-Q101

YES

TIN

FLAT

DUAL

SILICON

NVMFS6B03NLT1G by Onsemi

NVMFS6B03NLT1G

Onsemi

NVMFS6B03NLT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(ON). Widely used in power applications due to its 198W Pdiss, -55 to 175 °C operating range, and AEC-Q101 compliance.

180 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

145 A

145 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

198 W

520 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B03NLT3G by Onsemi

NVMFS6B03NLT3G

Onsemi

NVMFS6B03NLT3G by Onsemi is a Power FET with N-CHANNEL configuration and built-in diode. It features a 100V DS breakdown voltage, 520A max pulsed drain current, and 0.006 ohm max drain-source resistance. Ideal for automotive applications due to AEC-Q101 standard compliance and high power dissipation of 198W.

180 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

145 A

145 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

198 W

520 A

AEC-Q101

YES

Tin (Sn)

FLAT

DUAL

SILICON

NVMFS6B03NLWFT1G by Onsemi

NVMFS6B03NLWFT1G

Onsemi

NVMFS6B03NLWFT1G by Onsemi is a N-channel Power FET with 100V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

180 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

145 A

145 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

198 W

520 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON