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192 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STB20NM60D by STMicroelectronics

STB20NM60D

STMicroelectronics

STB20NM60D by STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 20A max drain current, and 192W power dissipation. Ideal for power management in various electronic devices.

700 mJ

SINGLE WITH BUILT-IN DIODE

600 V

20 A

20 A

.29 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

192 W

80 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STB20NM60-1 by STMicroelectronics

STB20NM60-1

STMicroelectronics

STB20NM60-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 20A max drain current, and 192W power dissipation. Ideal for high-performance power management in various electronic devices.

650 mJ

SINGLE WITH BUILT-IN DIODE

600 V

20 A

20 A

.29 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

192 W

80 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB20NM60T4 by STMicroelectronics

STB20NM60T4

STMicroelectronics

STB20NM60T4 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 80A max pulsed drain current, 650mJ avalanche energy rating, and 0.29 ohm max drain-source resistance. Operating in enhancement mode, it has a max power dissipation of 192W and can withstand up to 150°C.

650 mJ

SINGLE WITH BUILT-IN DIODE

600 V

20 A

20 A

.29 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

192 W

80 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STP20NM60A by STMicroelectronics

STP20NM60A

STMicroelectronics

STP20NM60A by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 20A max drain current, and 192W power dissipation. This versatile component is suitable for high-efficiency power management solutions.

SINGLE WITH BUILT-IN DIODE

600 V

20 A

20 A

.29 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

192 W

80 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SGT120R65AL by STMicroelectronics

SGT120R65AL

STMicroelectronics

SGT120R65AL by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage and 36A IDM. It is used for SWITCHING applications, operating in ENHANCEMENT MODE with a max power dissipation of 192W. This transistor features GALLIUM NITRIDE material and can handle up to 15A drain current.

BULK: 3000

DRAIN

SINGLE

650 V

15 A

.12 ohm

HIGH ELECTRON MOBILITY

.9 pF

R-PDSO-F8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

192 W

36 A

YES

FLAT

DUAL

SWITCHING

GALLIUM NITRIDE