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187 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PHU108NQ03LT,127 by NXP Semiconductors

PHU108NQ03LT,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 187 W; Case Connection: DRAIN; Transistor Application: SWITCHING;

LOGIC LEVEL COMPATIBLE

180 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

75 A

75 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

187 W

240 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SUP75P03-07-E3 by Vishay Intertechnology

SUP75P03-07-E3

Vishay Intertechnology

Vishay Intertechnology's SUP75P03-07-E3 is a P-channel Power FET with 30V DS breakdown voltage and 0.007 ohm RDS(on). Ideal for high-power applications, it features 240A IDM, 75A ID, and 187W Pd max. Suitable for enhancement mode operation in various electronic systems.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

75 A

75 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

P-CHANNEL

187 W

240 A

Not Qualified

Other Transistors

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SILICON