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18 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPD50R3K0CEBTMA1 by Infineon Technologies

IPD50R3K0CEBTMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Minimum DS Breakdown Voltage: 500 V; JESD-30 Code: R-PSSO-G2;

18 mJ

SINGLE WITH BUILT-IN DIODE

500 V

1.7 A

1.7 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

18 W

4.1 A

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPU50R3K0CEBKMA1 by Infineon Technologies

IPU50R3K0CEBKMA1

Infineon Technologies

Infineon's IPU50R3K0CEBKMA1 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Featuring 4.1A IDM and 18mJ EAS, it operates in enhancement mode with 3ohm RDS(on). With a max power dissipation of 18W and operating temp up to 150°C, it offers reliable performance in various industrial settings.

18 mJ

SINGLE WITH BUILT-IN DIODE

500 V

1.7 A

1.7 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

18 W

4.1 A

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NVTFS5124PLWFTWG by Onsemi

NVTFS5124PLWFTWG

Onsemi

NVTFS5124PLWFTWG by Onsemi is a P-CHANNEL power FET with a max drain current of 6A and max power dissipation of 18W. It is suitable for applications requiring high power handling in surface mount configurations, such as automotive electronics or industrial control systems.

SINGLE

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

P-CHANNEL

18 W

Other Transistors

YES

MATTE TIN

30

NTD5C688NLT4G by Onsemi

NTD5C688NLT4G

Onsemi

NTD5C688NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 77A IDM, and 0.04 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for power management applications. Operating from -55 to 175 °C, it features a built-in diode and avalanche energy rating of 48 mJ.

48 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

17 A

17 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

18 W

77 A

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SILICON