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179 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
CSD19531KCS by Texas Instruments

CSD19531KCS

Texas Instruments

CSD19531KCS by Texas Instruments is a N-CHANNEL power FET with a min DS breakdown voltage of 100V. It is designed for switching applications and has a max pulsed drain current of 285A.

AVALANCHE RATED

180 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

100 A

100 A

.0088 ohm

METAL-OXIDE SEMICONDUCTOR

17 pF

TO-220

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

179 W

285 A

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPI120N08S404AKSA1 by Infineon Technologies

IPI120N08S404AKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 179 W; No. of Terminals: 3; Minimum Operating Temperature: -55 Cel;

310 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

120 A

.0044 ohm

METAL-OXIDE SEMICONDUCTOR

200 pF

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

179 W

480 A

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

NVMFS5C406NWFT1G by Onsemi

NVMFS5C406NWFT1G

Onsemi

NVMFS5C406NWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0008 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

439 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

353 A

353 A

.0008 ohm

METAL-OXIDE SEMICONDUCTOR

150 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

179 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NTMFS5C406NT1G by Onsemi

NTMFS5C406NT1G

Onsemi

NTMFS5C406NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0008 ohm RDS(on). Ideal for power applications in small outline packages with operating temperatures from -55 to 175 °C.

439 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

353 A

353 A

.0008 ohm

METAL-OXIDE SEMICONDUCTOR

150 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

179 W

900 A

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON