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176 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP90N04MUK-S18-AY by Renesas Electronics

NP90N04MUK-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Drain Current (ID): 90 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

90 A

90 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

176 W

FET General Purpose Powers

NO

NOT SPECIFIED

NP90N04NUK-S18-AY by Renesas Electronics

NP90N04NUK-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

90 A

90 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

176 W

FET General Purpose Powers

NO

NOT SPECIFIED

NP90N055MUK-S18-AY by Renesas Electronics

NP90N055MUK-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Drain Current (ID): 90 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

90 A

90 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

176 W

FET General Purpose Powers

NO

NOT SPECIFIED

NP90N055NUK-S18-AY by Renesas Electronics

NP90N055NUK-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 90 A;

SINGLE

90 A

90 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

176 W

FET General Purpose Powers

NO

NOT SPECIFIED

IPP60R160P6XKSA1 by Infineon Technologies

IPP60R160P6XKSA1

Infineon Technologies

IPP60R160P6XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage and 68A IDM. Ideal for switching applications, it has a 0.16 ohm max RDS(on) and operates in enhancement mode. With 176W power dissipation, it can handle up to 497mJ EAS, making it suitable for high-power tasks.

497 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

23.8 A

.16 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

176 W

68 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPW60R160P6FKSA1 by Infineon Technologies

IPW60R160P6FKSA1

Infineon Technologies

Infineon's IPW60R160P6FKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 68A IDM, 497mJ EAS, and 0.16 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 176W in a FLANGE MOUNT package.

497 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

23.8 A

.16 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

176 W

68 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FDB9406L-F085 by Onsemi

FDB9406L-F085

Onsemi

The Onsemi FDB9406L-F085 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 110A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an EAS of 217mJ. Suitable for surface mount with GULL WING terminals, it can handle up to 176W power dissipation at temperatures ranging from -55°C to 175°C.

217 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

110 A

110 A

.0022 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

176 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

145 ns

90 ns

C3M0045065K by Wolfspeed

C3M0045065K

Wolfspeed

C3M0045065K by Wolfspeed is a N-CHANNEL FET with 650V DS breakdown voltage and 132A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.06 ohm max RDS(on), and operates in ENHANCEMENT MODE.

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

49 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

176 W

132 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE