Loading...

175 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SPP47N10 by Infineon Technologies

SPP47N10

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Pulsed Drain Current (IDM): 188 A; Maximum Operating Temperature: 175 Cel;

AVALANCHE RATED

400 mJ

SINGLE WITH BUILT-IN DIODE

100 V

47 A

47 A

.033 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

175 W

188 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

SPI47N10 by Infineon Technologies

SPI47N10

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Additional Features: AVALANCHE RATED; Maximum Pulsed Drain Current (IDM): 188 A;

AVALANCHE RATED

400 mJ

SINGLE WITH BUILT-IN DIODE

100 V

47 A

47 A

.033 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

175 W

188 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

SILICON

STW14NM50 by STMicroelectronics

STW14NM50

STMicroelectronics

STW14NM50 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 14A max drain current. It offers a low on-resistance of 0.35Ω and can handle up to 175W power dissipation. Its robust design ensures reliability in high-temperature environments (up to 150 °C).

ULTRA-LOW RESISTANCE

400 mJ

SINGLE WITH BUILT-IN DIODE

500 V

14 A

14 A

.35 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

175 W

56 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SPI47N10L by Infineon Technologies

SPI47N10L

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE;

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

400 mJ

SINGLE WITH BUILT-IN DIODE

100 V

47 A

47 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

175 W

188 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW14NM50FD by STMicroelectronics

STW14NM50FD

STMicroelectronics

STW14NM50FD by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 14A max drain current, and 175W power dissipation. Ideal for high-efficiency circuits in various electronic devices.

400 mJ

SINGLE WITH BUILT-IN DIODE

500 V

14 A

14 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AA

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

175 W

56 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON