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151 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPI65R190CFDXKSA1 by Infineon Technologies

IPI65R190CFDXKSA1

Infineon Technologies

IPI65R190CFDXKSA1 by Infineon Technologies is a power FET with a min DS breakdown voltage of 650V. It is used for switching applications and has a max pulsed drain current of 57.2A.

484 mJ

SINGLE WITH BUILT-IN DIODE

650 V

17.5 A

17.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

151 W

57.2 A

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPP65R190CFDXKSA1 by Infineon Technologies

IPP65R190CFDXKSA1

Infineon Technologies

IPP65R190CFDXKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage and 57.2A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 151W. The transistor features a 0.19 ohm on-resistance and can handle up to 17.5A drain current efficiently.

484 mJ

SINGLE WITH BUILT-IN DIODE

650 V

17.5 A

17.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

151 W

57.2 A

Not Qualified

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPW65R190CFDFKSA1 by Infineon Technologies

IPW65R190CFDFKSA1

Infineon Technologies

Infineon's IPW65R190CFDFKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 57.2A IDM, 484mJ EAS, and 0.19 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 151W in a FLANGE MOUNT package.

484 mJ

SINGLE WITH BUILT-IN DIODE

650 V

17.5 A

17.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

151 W

57.2 A

Not Qualified

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPP65R190CFDAAKSA1 by Infineon Technologies

IPP65R190CFDAAKSA1

Infineon Technologies

IPP65R190CFDAAKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 57.2A pulsed drain current, 484mJ avalanche energy rating, and 0.19 ohm max on-resistance. Suitable for enhancement mode operation in high-power systems up to 150°C.

HIGH RELIABILITY

484 mJ

SINGLE WITH BUILT-IN DIODE

650 V

17.5 A

17.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

151 W

57.2 A

AEC-Q101

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPW65R190CFDAFKSA1 by Infineon Technologies

IPW65R190CFDAFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 151 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-247;

HIGH RELIABILITY

484 mJ

SINGLE WITH BUILT-IN DIODE

650 V

17.5 A

17.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

151 W

57.2 A

AEC-Q101

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPI65R190CFDXKSA2 by Infineon Technologies

IPI65R190CFDXKSA2

Infineon Technologies

IPI65R190CFDXKSA2 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a Max IDM of 57.2A and EAS of 484mJ, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a low 0.19 ohm RDS(ON) and can handle up to 151W power dissipation.

484 mJ

SINGLE WITH BUILT-IN DIODE

650 V

17.5 A

17.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

151 W

57.2 A

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPL65R210CFDAUMA1 by Infineon Technologies

IPL65R210CFDAUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 151 W; Avalanche Energy Rating (EAS): 484 mJ; JESD-609 Code: e3;

484 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

16.6 A

16.6 A

.21 ohm

METAL-OXIDE SEMICONDUCTOR

S-PSSO-N4

e3

2A

1

4

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

151 W

53 A

YES

TIN

NO LEAD

SINGLE

SWITCHING

SILICON

IPL65R210CFDAUMA2 by Infineon Technologies

IPL65R210CFDAUMA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 151 W; Transistor Element Material: SILICON; No. of Terminals: 4;

484 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

16.6 A

16.6 A

.21 ohm

METAL-OXIDE SEMICONDUCTOR

S-PSSO-N4

e3

2A

1

4

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

151 W

53 A

YES

Tin (Sn)

NO LEAD

SINGLE

NOT SPECIFIED

SWITCHING

SILICON