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145 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
G3R160MT17J by Genesic Semiconductor

G3R160MT17J

Genesic Semiconductor

G3R160MT17J by Genesic Semiconductor is a N-CHANNEL FET with 1700V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 32A IDM, 158mJ EAS, and 0.224 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 175°C and -55°C min temp.

158 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

1700 V

18 A

.224 ohm

METAL-OXIDE SEMICONDUCTOR

4.1 pF

TO-263

R-PSSO-G7

1

7

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

145 W

32 A

IEC-60747-8-4

YES

GULL WING

SINGLE

SWITCHING

SILICON CARBIDE