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143 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP82N04MDG-S18-AY by Renesas Electronics

NP82N04MDG-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Maximum Drain Current (ID): 82 A; Additional Features: LOGIC LEVEL COMPATIBLE;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

82 A

82 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

143 W

328 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP82N055MUG-S18-AY by Renesas Electronics

NP82N055MUG-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 82 A;

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

82 A

82 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

143 W

328 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP82N055NUG-S18-AY by Renesas Electronics

NP82N055NUG-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

82 A

82 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

143 W

328 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP82N03PUG-E1-AY by Renesas Electronics

NP82N03PUG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 143 W; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

82 A

82 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

143 W

FET General Purpose Power

YES

NOT SPECIFIED

NP82N055PUG-E1-AY by Renesas Electronics

NP82N055PUG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 143 W; Maximum Drain Current (ID): 82 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

82 A

82 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

143 W

FET General Purpose Power

YES

NOT SPECIFIED

NVMFS5831NLWFT1G by Onsemi

NVMFS5831NLWFT1G

Onsemi

NVMFS5831NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0048 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Operating in enhancement mode with a max power dissipation of 143W at temperatures ranging from -55 to 175 °C.

683 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

26 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

389 pF

R-PDSO-F6

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

143 W

900 A

AEC-Q101

YES

FLAT

DUAL

SILICON