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139 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSC017N04NSGATMA1 by Infineon Technologies

BSC017N04NSGATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 40 V;

295 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

100 A

.0017 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

139 W

400 A

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

DMT10H003SPSW-13 by Diodes Incorporated

DMT10H003SPSW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; No. of Elements: 1; Terminal Finish: MATTE TIN;

612 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

152 A

.003 ohm

METAL-OXIDE SEMICONDUCTOR

34 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

139 W

608 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

BSC010N04LSCATMA1 by Infineon Technologies

BSC010N04LSCATMA1

Infineon Technologies

BSC010N04LSCATMA1 by Infineon is a N-CHANNEL FET with 40V DS Breakdown Voltage, 1128A IDM, and 0.00135 ohm Drain-Source On Resistance. Ideal for power applications requiring high drain current handling and low on-resistance in a small outline package.

330 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

248 A

.00135 ohm

METAL-OXIDE SEMICONDUCTOR

320 pF

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

139 W

1128 A

IEC-61249-2-21; IEC-68-1

YES

TIN

FLAT

DUAL

SILICON