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134.4 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMYS2D3N06CTWG by Onsemi

NVMYS2D3N06CTWG

Onsemi

NVMYS2D3N06CTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Features include SINGLE configuration, GULL WING terminals, and ENHANCEMENT MODE operation.

622 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

171 A

.0023 ohm

METAL-OXIDE SEMICONDUCTOR

24 pF

R-PSSO-G4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

134.4 W

900 A

AEC-Q101

YES

GULL WING

SINGLE

SILICON

FCP16N60N-F102 by Onsemi

FCP16N60N-F102

Onsemi

FCP16N60N-F102 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a Max IDM of 48A and EAS of 355mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.199 ohm RDS(on), making it ideal for high-power requirements up to 134.4W at temperatures ranging from -55 to 150 °C.

355 mJ

SINGLE WITH BUILT-IN DIODE

600 V

16 A

16 A

.199 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

134.4 W

48 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

181 ns

82.6 ns