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120 W Power Field Effect Transistors (FET) 10

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVB25P06T4G by Onsemi

NVB25P06T4G

Onsemi

NVB25P06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 600mJ EAS, and 0.082 ohm RDS(ON). With a max power dissipation of 120W and operating temperature up to 175 °C, it's suitable for various high-power electronic designs.

600 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

27.5 A

27.5 A

.082 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

120 W

80 A

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

STD80N6F6 by STMicroelectronics

STD80N6F6

STMicroelectronics

STD80N6F6 by STMicroelectronics is a N-CHANNEL FET with 80A max drain current and 120W max power dissipation. Utilizes metal-oxide semiconductor technology, suitable for high-power applications in surface mount configurations. Operating temperature up to 175°C makes it ideal for industrial use.

SINGLE

80 A

80 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

120 W

FET General Purpose Powers

YES

NOT SPECIFIED

NP36N055HLE-AY by Renesas Electronics

NP36N055HLE-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

36 A

36 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

120 W

FET General Purpose Power

NO

NOT SPECIFIED

IRF540N_R4942 by Fairchild Semiconductor

IRF540N_R4942

Fairchild Semiconductor

Fairchild Semiconductor's IRF540N_R4942 is a N-CHANNEL Power FET with 33A max drain current and 120W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as motor control and power supplies.

SINGLE

33 A

33 A

METAL-OXIDE SEMICONDUCTOR

e0

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

120 W

FET General Purpose Power

NO

Tin/Lead (Sn/Pb)

PHP71NQ03LT,127 by NXP Semiconductors

PHP71NQ03LT,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; No. of Terminals: 3; Terminal Finish: MATTE TIN;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

75 A

75 A

.0152 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

120 W

240 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NP70N10KUF-E1-AY by Renesas Electronics

NP70N10KUF-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 70 A;

SINGLE

70 A

70 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

120 W

FET General Purpose Power

YES

NOT SPECIFIED

NP70N10KUF-E2-AY by Renesas Electronics

NP70N10KUF-E2-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

70 A

70 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

120 W

FET General Purpose Power

YES

NOT SPECIFIED

STP8NM50 by STMicroelectronics

STP8NM50

STMicroelectronics

STP8NM50 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 32A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

200 mJ

SINGLE WITH BUILT-IN DIODE

500 V

5 A

8 A

.8 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

120 W

32 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD110NH02LT4 by STMicroelectronics

STD110NH02LT4

STMicroelectronics

STD110NH02LT4 by STMicroelectronics is a N-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A Max Pulsed Drain Current, 0.005ohm Max RDS(on), and 175°C Max Operating Temp. Suitable for high-power switching circuits in various electronic devices.

900 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

80 A

80 A

.005 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

120 W

320 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

SUP65P04-15-E3 by Vishay Intertechnology

SUP65P04-15-E3

Vishay Intertechnology

Vishay Intertechnology's SUP65P04-15-E3 is a P-channel FET with 40V DS breakdown voltage and 65A max drain current. Ideal for power applications, it features a single configuration with built-in diode, 0.015 ohm max on-resistance, and operates in enhancement mode up to 175°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

65 A

65 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

P-CHANNEL

120 W

240 A

Not Qualified

Other Transistors

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SILICON