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116 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9520-55,127 by NXP Semiconductors

BUK9520-55,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 116 W; No. of Terminals: 3; Maximum Feedback Capacitance (Crss): 235 pF;

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

52 A

52 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

235 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

116 W

116 W

208 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

225 ns

200 ns

NTMT185N60S5H by Onsemi

NTMT185N60S5H

Onsemi

NTMT185N60S5H by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 53A IDM and 124mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 116W and -55 to 150 °C operating temperature range, it offers reliable performance in various electronic systems.

124 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

15 A

.185 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

116 W

53 A

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON