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113.6 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTB125N02RT4 by Onsemi

NTB125N02RT4

Onsemi

NTB125N02RT4 by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 250A, EAS of 120mJ, and ID of 15.9A. With 0.0062 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power requirements.

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

15.9 A

95 A

.0062 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

113.6 W

250 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTB125N02R by Onsemi

NTB125N02R

Onsemi

NTB125N02R by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage, 250A IDM, and 0.0062 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 113.6W and operates at up to 150 °C temperature.

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

15.9 A

95 A

.0062 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

113.6 W

250 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTB125N02RG by Onsemi

NTB125N02RG

Onsemi

NTB125N02RG by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 250A IDM, and 0.0062 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 113.6W and operates at up to 150 °C.

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

125 A

95 A

.0062 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

113.6 W

250 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTB125N02RT4G by Onsemi

NTB125N02RT4G

Onsemi

NTB125N02RT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 250A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.0062 ohm RDS(on), and 120mJ EAS rating. Suitable for surface mount with GULL WING terminals, it operates in ENHANCEMENT MODE up to 150 °C.

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

125 A

95 A

.0062 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

113.6 W

250 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

DMT4001LPS-13 by Diodes Incorporated

DMT4001LPS-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 113.6 W; Package Style (Meter): SMALL OUTLINE; Terminal Form: FLAT;

460 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

100 A

100 A

.0016 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

3

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

113.6 W

400 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON