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113 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMT6004SCT by Diodes Incorporated

DMT6004SCT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 113 W; Terminal Finish: MATTE TIN; Avalanche Energy Rating (EAS): 200 mJ;

200 mJ

SINGLE WITH BUILT-IN DIODE

60 V

100 A

.00365 ohm

METAL-OXIDE SEMICONDUCTOR

105 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

113 W

180 A

MIL-STD-202

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMJ70H600SH3 by Diodes Incorporated

DMJ70H600SH3

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 113 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-251;

67.5 mJ

SINGLE WITH BUILT-IN DIODE

700 V

11 A

11 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

113 W

11 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

DMT31M7LPS-13 by Diodes Incorporated

DMT31M7LPS-13

Diodes Incorporated

DMT31M7LPS-13 by Diodes Incorporated is a N-channel Power FET with 30V DS breakdown voltage and 100A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operating in enhancement mode. With a max power dissipation of 113W and an avalanche energy rating of 215mJ, this MOSFET can handle high-power requirements efficiently.

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

100 A

.0024 ohm

METAL-OXIDE SEMICONDUCTOR

424 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

113 W

400 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT10H4M5LPS-13 by Diodes Incorporated

DMT10H4M5LPS-13

Diodes Incorporated

DMT10H4M5LPS-13 by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage, 400A IDM, and 0.0043 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 113W.

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

100 A

100 A

.0043 ohm

METAL-OXIDE SEMICONDUCTOR

25.5 pF

R-PDSO-F5

e3

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

113 W

400 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

CSD16321Q5T by Texas Instruments

CSD16321Q5T

Texas Instruments

CSD16321Q5T by Texas Instruments is an N-CHANNEL Power FET with 25V DS Breakdown Voltage and 0.0038 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, it features a max IDM of 400A and EAS of 218mJ. This SINGLE transistor in PLASTIC/EPOXY package operates b/w -55 to 150 °C, making it suitable for various power management needs.

AVALANCHE RATED

218 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

100 A

.0038 ohm

METAL-OXIDE SEMICONDUCTOR

150 pF

R-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

113 W

400 A

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON