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108 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SCT2280KEC by ROHM

SCT2280KEC

ROHM

ROHM's SCT2280KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 35A pulsed drain current. With a max power dissipation of 108W and operating temperature of 175°C, it offers reliable performance in various industrial settings.

SINGLE WITH BUILT-IN DIODE

1200 V

14 A

.364 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

108 W

35 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

NVATS5A304PLZT4G by Onsemi

NVATS5A304PLZT4G

Onsemi

NVATS5A304PLZT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 480A IDM, 656mJ EAS, and 0.0089 ohm Drain-Source On Resistance. With a max power dissipation of 108W and operating temperature range from -55 to 175 °C, it is suitable for high-power switching applications in automotive electronics.

656 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

120 A

120 A

.0089 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e6

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

108 W

480 A

AEC-Q101

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON