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105 W Power Field Effect Transistors (FET) 10

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP90N04VUG-E1-AY by Renesas Electronics

NP90N04VUG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; JEDEC-95 Code: TO-252; Transistor Element Material: SILICON;

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

90 A

90 A

.004 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

105 W

300 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP90N06VLG-E1-AY by Renesas Electronics

NP90N06VLG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

90 A

90 A

.0078 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

105 W

180 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP90N03VHG-E1-AY by Renesas Electronics

NP90N03VHG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 360 A;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

90 A

90 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

105 W

360 A

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NP60N04MUK-S18-AY by Renesas Electronics

NP60N04MUK-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

60 A

60 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

105 W

FET General Purpose Powers

NO

NOT SPECIFIED

NP60N04NUK-S18-AY by Renesas Electronics

NP60N04NUK-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Maximum Drain Current (Abs) (ID): 60 A; Maximum Drain Current (ID): 60 A;

SINGLE

60 A

60 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

105 W

FET General Purpose Powers

NO

NOT SPECIFIED

NP60N055NUK-S18-AY by Renesas Electronics

NP60N055NUK-S18-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Maximum Drain Current (Abs) (ID): 60 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

60 A

60 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

105 W

FET General Purpose Powers

NO

NOT SPECIFIED

2SK3575-AZ by Renesas Electronics

2SK3575-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

83 A

83 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

260

N-CHANNEL

105 W

FET General Purpose Power

NO

10

IPI80N06S3L-08 by Infineon Technologies

IPI80N06S3L-08

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Avalanche Energy Rating (EAS): 170 mJ; Qualification: Not Qualified;

AVALANCHE RATED

170 mJ

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.0079 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

105 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP80N06S3L-08 by Infineon Technologies

IPP80N06S3L-08

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;

AVALANCHE RATED

170 mJ

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.0079 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

105 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STK130N4LF7AG by STMicroelectronics

STK130N4LF7AG

STMicroelectronics

STK130N4LF7AG by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 40 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance power management in compact designs.

250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

100 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

33 pF

R-PSSO-G4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

105 W

400 A

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

SINGLE

SWITCHING

SILICON