Loading...

1.9 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
TPC8048-H(TE12L,Q) by Toshiba

TPC8048-H(TE12L,Q)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;

SINGLE

16 A

16 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

1.9 W

FET General Purpose Power

YES

DMN2022UNS-13 by Diodes Incorporated

DMN2022UNS-13

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 150 Cel;

14.7 mJ

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

10.7 A

.017 ohm

METAL-OXIDE SEMICONDUCTOR

160 pF

S-PDSO-F8

e3

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.9 W

60 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMP65H13D0HSS-13 by Diodes Incorporated

DMP65H13D0HSS-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Terminal Finish: MATTE TIN; Operating Mode: ENHANCEMENT MODE;

SINGLE WITH BUILT-IN DIODE

650 V

.25 A

13 ohm

METAL-OXIDE SEMICONDUCTOR

3.3 pF

R-PDSO-G8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.9 W

2 A

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP65H11D0HSS-13 by Diodes Incorporated

DMP65H11D0HSS-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;

SINGLE WITH BUILT-IN DIODE

650 V

.27 A

11 ohm

METAL-OXIDE SEMICONDUCTOR

3.5 pF

R-PDSO-G8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.9 W

2.3 A

MIL-STD-202

YES

Matte Tin (Sn)

GULL WING

DUAL

SWITCHING

SILICON

DMN14M8UFDF-13 by Diodes Incorporated

DMN14M8UFDF-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;

1.6 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

12 V

14.7 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

352 pF

S-PDSO-N6

e4

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.9 W

100 A

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

DMT10H032LSS-13 by Diodes Incorporated

DMT10H032LSS-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain-Source On Resistance: .032 ohm; Package Body Material: PLASTIC/EPOXY;

25.3 mJ

SINGLE WITH BUILT-IN DIODE

100 V

5 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

6.9 pF

R-PDSO-G8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.9 W

42 A

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2030UCA4-7 by Diodes Incorporated

DMN2030UCA4-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; JESD-609 Code: e4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.05 ohm

METAL-OXIDE SEMICONDUCTOR

54 pF

S-XBCC-N4

e4

2

4

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

N-CHANNEL

1.9 W

MIL-STD-202

YES

NICKEL GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN2009UCA4-7 by Diodes Incorporated

DMN2009UCA4-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum DS Breakdown Voltage: 20 V; No. of Terminals: 4;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.0226 ohm

METAL-OXIDE SEMICONDUCTOR

107 pF

S-XBCC-N4

e4

2

4

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

N-CHANNEL

1.9 W

MIL-STD-202

YES

NICKEL GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON