Loading...

1.8 W Power Field Effect Transistors (FET) 23

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP40N10PDF-E1-AY by Renesas Electronics

NP40N10PDF-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Transistor Element Material: SILICON; Additional Features: LOGIC LEVEL COMPATIBLE;

LOGIC LEVEL COMPATIBLE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

40 A

40 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.8 W

80 A

Not Qualified

FET General Purpose Powers

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

UPA2379T1P-E1-A by Renesas Electronics

UPA2379T1P-E1-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Finish: TIN BISMUTH; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 8 A;

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

N-CHANNEL

1.8 W

FET General Purpose Power

YES

TIN BISMUTH

BSP373L6327HTSA1 by Infineon Technologies

BSP373L6327HTSA1

Infineon Technologies

Infineon's BSP373L6327HTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage and 6.8A IDM, suitable for power applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.8W. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance.

AVALANCHE RATED

45 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

1.7 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

105 pF

R-PDSO-G4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.8 W

1.8 W

6.8 A

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

195 ns

60 ns

DMP1018UCB9-7 by Diodes Incorporated

DMP1018UCB9-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; No. of Elements: 1; Terminal Finish: TIN SILVER COPPER;

SINGLE WITH BUILT-IN DIODE

12 V

7.6 A

5.5 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

120 pF

S-PBGA-B9

e1

1

1

9

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

1.8 W

60 A

Other Transistors

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON

BSP324L6327HTSA1 by Infineon Technologies

BSP324L6327HTSA1

Infineon Technologies

Infineon's BSP324L6327HTSA1 is a N-CHANNEL FET with 400V DS breakdown voltage, ideal for switching applications. It features a built-in diode, 25 ohm RDS(on), and operates in enhancement mode. With AEC-Q101 standard compliance, it offers fast turn-on/off times and low feedback capacitance for efficient performance in automotive electronics.

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

400 V

.17 A

25 ohm

METAL-OXIDE SEMICONDUCTOR

5.7 pF

R-PDSO-G4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.8 W

.68 A

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

127 ns

13.5 ns

BSP613P by Infineon Technologies

BSP613P

Infineon Technologies

BSP613P by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 11.6A and an avalanche energy rating of 150mJ. With a 0.13 ohm max drain-source resistance, this MOSFET operates in enhancement mode at up to 150°C, making it suitable for high-power applications.

AVALANCHE RATED

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

2.9 A

2.9 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.8 W

11.6 A

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

SPN02N60S5 by Infineon Technologies

SPN02N60S5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Case Connection: DRAIN; JESD-30 Code: R-PDSO-G4;

HIGH VOLTAGE

50 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

.4 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e0

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

255

N-CHANNEL

1.8 W

2.2 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

SPN03N60S5 by Infineon Technologies

SPN03N60S5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .7 A;

HIGH VOLTAGE

100 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

.7 A

.7 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.8 W

3 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SILICON

BSP129L6327 by Infineon Technologies

BSP129L6327

Infineon Technologies

BSP129L6327 by Infineon Technologies is a N-CHANNEL Power FET with PLASTIC/EPOXY package. It has a Min DS Breakdown Voltage of 240V and Max Drain Current of 0.35A, making it suitable for applications requiring high power dissipation in small outline packages. Ideal for depletion mode operation at up to 150°C, this FET offers low drain-source resistance of 6 ohm for efficient performance.

DRAIN

SINGLE WITH BUILT-IN DIODE

240 V

.35 A

.35 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.8 W

1.4 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SILICON

BUK98150-55,135 by NXP Semiconductors

BUK98150-55,135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .15 ohm;

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

15 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

5.5 A

2.6 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.8 W

30 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

SPN04N60S5 by Infineon Technologies

SPN04N60S5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 600 V;

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

.8 A

.8 A

.95 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.8 W

3 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SILICON

BSP615S2L by Infineon Technologies

BSP615S2L

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

2.8 A

2.8 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.8 W

11 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

SPN01N60C3 by Infineon Technologies

SPN01N60C3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;

SINGLE WITH BUILT-IN DIODE

600 V

.3 A

.3 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.8 W

1.6 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SILICON

SPN03N60C3 by Infineon Technologies

SPN03N60C3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; JEDEC-95 Code: TO-261AA; Package Style (Meter): SMALL OUTLINE;

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

.7 A

.7 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

255

N-CHANNEL

1.8 W

3 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTQD6968NR2G by Onsemi

NTQD6968NR2G

Onsemi

NTQD6968NR2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 18A IDM, and 0.03 ohm RDS(on). Commonly used for SWITCHING applications due to its COMMON DRAIN configuration. It comes in a small outline package with GULL WING terminals.

LOGIC LEVEL COMPATIBLE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

7 A

6.2 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

3

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.8 W

18 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMT10H072LFDFQ-13 by Diodes Incorporated

DMT10H072LFDFQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; JESD-30 Code: S-PDSO-N6; Terminal Finish: NICKEL PALLADIUM GOLD;

1.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

4 A

.062 ohm

METAL-OXIDE SEMICONDUCTOR

2.5 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.8 W

22 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

BSP322PL6327HTSA1 by Infineon Technologies

BSP322PL6327HTSA1

Infineon Technologies

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Pulsed Drain Current (IDM): 4 A; Maximum Operating Temperature: 150 Cel;

AVALANCHE RATED

57 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

1 A

.8 ohm

METAL-OXIDE SEMICONDUCTOR

51 pF

R-PDSO-G4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.8 W

4 A

AEC-Q101

YES

GULL WING

DUAL

SILICON

44.3 ns

13.4 ns

DMP6110SVT-13 by Diodes Incorporated

DMP6110SVT-13

Diodes Incorporated

DMP6110SVT-13 by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM, 18mJ EAS, and 0.105 ohm RDS(ON). With a small outline package and -55 to 150 °C operating range, it's suitable for various power management designs.

18 mJ

SINGLE WITH BUILT-IN DIODE

60 V

7.3 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

44 pF

R-PDSO-G6

e3

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.8 W

24 A

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMC3025LNS-13 by Diodes Incorporated

DMC3025LNS-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Feedback Capacitance (Crss): 57 pF; JESD-609 Code: e3;

9.8 mJ

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

7.2 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

57 pF

S-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.8 W

45 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

BSP179H6327XTSA1 by Infineon Technologies

BSP179H6327XTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Minimum DS Breakdown Voltage: 400 V; Maximum Turn Off Time (toff): 127 ns;

DRAIN

SINGLE WITH BUILT-IN DIODE

400 V

.21 A

18 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

R-PDSO-G4

e3

1

1

4

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.8 W

1.8 W

.83 A

AEC-Q100; IEC-61249-2-21

YES

TIN

GULL WING

DUAL

SILICON

127 ns

22.3 ns

DMT10H072LFDF-13 by Diodes Incorporated

DMT10H072LFDF-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;

1.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

4 A

.062 ohm

METAL-OXIDE SEMICONDUCTOR

2.5 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.8 W

22 A

MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMT3006LDV-13 by Diodes Incorporated

DMT3006LDV-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Drain Current (ID): 25 A; Moisture Sensitivity Level (MSL): 1;

58 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

25 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

72 pF

S-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.8 W

90 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMT3006LDV-7 by Diodes Incorporated

DMT3006LDV-7

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Position: DUAL; Avalanche Energy Rating (EAS): 58 mJ;

58 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

25 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

72 pF

S-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.8 W

90 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON